The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Apr. 04, 2023
Applicant:
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Inventor:
Atsushi Suzuki, Nishigo-mura, JP;
Assignee:
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/00 (2006.01); C30B 25/18 (2006.01); C30B 29/52 (2006.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
C30B 29/52 (2013.01); B32B 3/00 (2013.01); C30B 25/18 (2013.01); H10D 62/832 (2025.01);
Abstract
The present invention is an epitaxial wafer, including an epitaxial film of a semiconductor material different from silicon being formed on a silicon substrate, in which the epitaxial film has a film thickness of less than 1 at a wafer outer-peripheral portion when a film thickness at a center of the wafer is defined as 1. Thereby, the epitaxial wafer having a heteroepitaxial film with few defects without dependence on a dopant concentration or a variety of a silicon wafer is provided.