Nishio, Japan

Atsushi Suzuki

This inventor holds 1 USPTO granted patent and 13 published patent applications. Top assignee: Shin-Etsu Handotai, Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Atsushi Suzuki. Retrieved from https://idiyas.com/inventor/atsushi-suzuki-we29hc6z

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations of Atsushi Suzuki

Introduction

Atsushi Suzuki is a notable inventor based in Nishigo, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on the development of advanced materials that enhance the performance of electronic devices.

Latest Patents

Atsushi Suzuki holds a patent for an epitaxial wafer. This invention includes an epitaxial film of a semiconductor material that differs from silicon, which is formed on a silicon substrate. The epitaxial film has a film thickness of less than 1 at the wafer's outer-peripheral portion, with the film thickness at the center defined as 1. This innovation provides an epitaxial wafer with a heteroepitaxial film that has few defects, independent of dopant concentration or the variety of silicon wafer used. He has 1 patent to his name.

Career Highlights

Atsushi Suzuki is currently employed at Shin-Etsu Handotai, Ltd. His role at the company allows him to work on cutting-edge semiconductor technologies. His contributions have been instrumental in advancing the capabilities of semiconductor materials.

Conclusion

Atsushi Suzuki's work in the field of semiconductor technology exemplifies innovation and dedication. His patent for the epitaxial wafer showcases his commitment to improving electronic materials. His contributions continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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