The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Feb. 24, 2017
Sanken Electric Co., Ltd., Niiza, JP;
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Ken Sato, Miyoshi-machi, JP;
Hiroshi Shikauchi, Niiza, JP;
Masaru Shinomiya, Annaka, JP;
Keitaro Tsuchiya, Takasaki, JP;
Kazunori Hagimoto, Takasaki, JP;
SANKEN ELECTRIC CO., LTD., Saitama, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A semiconductor device substrate including: a substrate; a buffer layer which is provided on the substrate and made of a nitride semiconductor; and a device active layer which is formed of a nitride semiconductor layer provided on the buffer layer, the semiconductor device substrate in that the buffer layer includes: a first region which contains carbon and iron; a second region which is provided on the first region and has average concentration of iron lower than that in the first region and average concentration of carbon higher than that in the first region, and the average concentration of the carbon in the second region is lower than the average concentration of the iron in the first region. The semiconductor device substrate which can suppress a transverse leak current in a high-temperature operation of a device while suppressing a longitudinal leak current and can inhibit a current collapse phenomenon is provided.