The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Jun. 17, 2016
Sanken Electric Co., Ltd., Niiza-shi, Saitama, JP;
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Ken Sato, Miyoshi-machi, JP;
Hiroshi Shikauchi, Niiza, JP;
Hirokazu Goto, Minato-ku, JP;
Masaru Shinomiya, Annaka, JP;
Keitaro Tsuchiya, Takasaki, JP;
Kazunori Hagimoto, Takasaki, JP;
SANKEN ELECTRIC CO., LTD., Saitama, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A substrate for semiconductor device includes a substrate, a buffer layer which is provided on the substrate and made of a nitride semiconductor, and a device active layer which is provided on the buffer layer and composed of a nitride semiconductor layer, wherein the buffer layer contains carbon and iron, a carbon concentration of an upper surface of the buffer layer is higher than a carbon concentration of a lower surface of the buffer layer, and an iron concentration of the upper surface of the buffer layer is lower than an iron concentration of the lower surface of the buffer layer. As a result, the substrate for semiconductor device can reduce a leak current in a lateral direction at the time of a high-temperature operation while suppressing a leak current in a longitudinal direction.