The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
May. 02, 2014
Sanken Electric Co., Ltd., Niiza-shi, Saitama, JP;
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Hiroshi Shikauchi, Niiza, JP;
Ken Sato, Miyoshi, JP;
Hirokazu Goto, Minato, JP;
Masaru Shinomiya, Annaka, JP;
Keitaro Tsuchiya, Takasaki, JP;
Kazunori Hagimoto, Takasaki, JP;
SHANKEN ELECTRIC CO., LTD., Niiza-shi, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A semiconductor substrate having a silicon-based substrate, a buffer layer provided on the silicon-based substrate and made of a nitride semiconductor containing boron, and an operation layer formed on the buffer layer, wherein a concentration of boron in the buffer layer gradually decreasing toward a side of the operation layer from a side of the silicon-based substrate. Thereby, the semiconductor substrate in which the buffer layer contains boron sufficient to obtain a dislocation suppression effect and boron is not diffused to the operation layer is provided.