The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Sep. 06, 2019
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A method for manufacturing an epitaxial wafer including the steps of: preparing a silicon-based substrate having a chamfered portion in a peripheral portion; forming an annular trench in the chamfered portion of the silicon-based substrate along an internal periphery of the chamfered portion; and performing an epitaxial growth on the silicon-based substrate having the trench formed. This provides a method for manufacturing an epitaxial wafer by which a crack generated in a peripheral chamfered portion can be suppressed from extending towards the center.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile