This inventor holds 19 USPTO granted patents and 14 published patent applications and 3 EPO patents, primarily in Memory Technology. Top assignees: Yangtze Memory Technologies., Ltd., Yangtze Memory Technologies Co., Ltd.. Active years: 2021-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:

Years Active: 2021-2026
Areas of Expertise:
Title: Innovations of Li Xiang in Non-Volatile Memory Technology
Introduction
Li Xiang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of non-volatile memory technology. With a total of 19 patents to his name, Li Xiang is recognized for his innovative approaches and solutions in memory device operations.
Latest Patents
Li Xiang's latest patents include a method for operating non-volatile memory that involves an unselected word line. This method applies a first voltage rising at a first slope to the unselected word line. The voltage generator stops outputting the first voltage once it reaches a predetermined level, which is higher than a pass voltage. Additionally, he has developed a memory device that includes a source line, bit line, memory string, word line, select line, and peripheral circuit. This device is designed to apply specific voltages to enhance its operational efficiency.
Career Highlights
Li Xiang is currently employed at Yangtze Memory Technologies Co., Ltd. His work focuses on advancing memory technology, which is crucial for various electronic applications. His innovative contributions have positioned him as a key figure in the industry.
Collaborations
Li Xiang collaborates with notable colleagues, including Ke Liang and Weihua Shi. Their teamwork fosters an environment of creativity and innovation, leading to groundbreaking advancements in memory technology.
Conclusion
Li Xiang's work in non-volatile memory technology exemplifies the impact of innovation in the electronics field. His patents and collaborations continue to shape the future of memory devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile