The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Jul. 24, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Li Xiang, Wuhan, CN;

Ke Liang, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01);
Abstract

Methods, devices, and systems for managing memory devices are provided. In one aspect, a memory device can include a memory array and a peripheral circuit. The memory array can include a first and a second memory string. The peripheral circuit is configured to perform a first verification operation during a first loop of a program operation to program the first memory string. During a pre-pulse phase of the first verification operation, a pass voltage is applied to a first select line coupled to first select gate transistor of the second memory string for a first duration. The peripheral circuit is configured to perform a second verification operation during a second loop of the program operation that is after the first loop. During a pre-pulse phase of the second verification operation, a pass voltage is applied to the first select line for a second duration shorter than the first duration.


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