The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Dec. 22, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Li Xiang, Hubei, CN;

Ming Yang, Hubei, CN;

Wei Huang, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/12 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0425 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/12 (2013.01);
Abstract

The present disclosure provides a high voltage (HV) switch system for a memory device that includes a first switch configured to transfer a boost voltage during a first time period to a first set of selected word lines or a second set of selected word lines of the memory device; a second switch configured to transfer a target regulated voltage during a second time period to the first set of the selected word lines when programming a first set of memory cells coupled to the first set of the selected word lines; and a third switch configured to transfer the target regulated voltage during the second time period to the second set of the selected word lines that is different from the first set of word lines when programming a second set of memory cells coupled to the second set of the selected word lines.


Find Patent Forward Citations

Loading…