Yangtze Memory Technologies Co., Ltd.

Li Xiang

Ke Liang

Zhipeng Dong

Weihua Shi

Haibo Li

Ying Cui

Ling Chu

Min Zhang

Haiwen Fang

A method of operating a non-volatile memory including an unselected word line is provided. A first voltage rising at a first slope is applied by a voltage generator to the unselected word line. Outputting the first voltage is stopped by the voltage generator in response to that the first voltage rises to a predetermined voltage, wherein the predetermined voltage is higher than a pass voltage. The pass voltage is outputted by the voltage generator to the unselected word line.

Non-volatile memory and operating method thereof

A memory device, an operating method thereof, a system, and a non-transitory tangible storage medium are disclosed. The memory device includes a source line (SL), a bit line (BL), a memory string, a word line, a select line and a peripheral circuit. The memory string includes a memory cell and a select transistor including a storage layer. The word line is coupled to the memory cell. The select line is coupled to the select transistor. The peripheral circuit is coupled to the SL, the BL, the select line, and the word line. The peripheral circuit is configured to: apply a first voltage to the select line; and apply a second voltage to the SL and/or the BL, in which a first peak level of the first voltage is greater than a second peak level of second voltage.

Memory device, operating method thereof, system, and storage medium

The present application discloses a non-volatile memory and an operating method of the non-volatile memory. The non-volatile memory includes a plurality of memory cells, and unselected word lines connected with the memory cells. The method includes applying a first voltage rising at a first slope to unselected word lines to charge the unselected word lines, and stopping applying the first voltage to the unselected word lines in response to that the first voltage rises to a predetermined voltage. The predetermined voltage is higher than a pass voltage of a plurality of memory cells connected with the unselected word lines.

A memory device is provided. The memory device includes an array of memory cells arranged in a plurality of rows, a plurality of word lines respectively coupled to the plurality of rows of the memory cells; and a peripheral circuit coupled to the word lines and configured to perform multi-pass programming on a selected row of memory cells coupled to a selected word line of the word lines. The multi-pass programming includes a plurality of programming passes, each of the programming passes having a programming operation and a verify operation. To perform the multi-pass programming, the peripheral circuit is configured to, in a non-last programming pass, perform a negative gate stress (NGS) operation on each memory cell in the selected row of memory cells between the programming operation and the verify operation.

Negative gate stress operation in multi-pass programming and memory device thereof

A memory device includes an array of memory cells, a plurality of word lines coupled to the array of memory cells, a controller configured to control a read operation on the array of memory cells, and a row decoder coupled to the word lines and the controller and configured to, in the read operation, induce a coupling effect between a select word line and an adjacent unselect word line of the plurality of word lines, and discharge the select word line to a start read level due to at least the coupling effect.

Methods of enhancing speed of reading data from memory device

A memory device includes N rows of memory cells and N word lines coupled thereto, respectively. A method of reading data from the memory device includes: applying a first pre-pulse voltage to an nth word line while applying a second pre-pulse voltage to an adjacent word line adjacent to the nth word line, the second pre-pulse voltage exceeding the first pre-pulse voltage, and n being an integer ranging from 1 to N; grounding the nth word line while maintaining the second pre-pulse voltage on the adjacent word line; pulling a voltage on the nth word line towards a start read level; and prior to the voltage on the nth word line reaching the start read level, driving a voltage on the adjacent word line to the first pre-pulse voltage.

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Wuhan, China

Li Xiang