The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Dec. 28, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Yiqun Cen, Wuhan, CN;

Li Xiang, Wuhan, CN;

Ruxin Wei, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 16/0483 (2013.01);
Abstract

Memory devices, circuits, and methods for voltage control in memory devices are provided. One example method includes adjusting a rate of change of a reference voltage based on a step voltage and a step time duration, where adjusting the rate of change of the reference voltage includes changing the reference voltage by the step voltage over a time period that equals the step time duration. An output voltage from one or more charge pumps is generated using the reference voltage, where a ratio between the output voltage and the reference voltage is locked.


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