Wuhan, China

Yiqun Cen

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yiqun Cen: Innovator in Voltage Control for Memory Devices

Introduction

Yiqun Cen is a notable inventor based in Wuhan, China. He has made significant contributions to the field of memory devices, particularly in voltage control mechanisms. His innovative approach has led to advancements that enhance the performance and efficiency of memory technologies.

Latest Patents

Yiqun Cen holds a patent for "Voltage control in memory devices." This patent describes memory devices, circuits, and methods for voltage control. One example method includes adjusting the rate of change of a reference voltage based on a step voltage and a step time duration. This adjustment involves changing the reference voltage by the step voltage over a time period that equals the step time duration. An output voltage from one or more charge pumps is generated using the reference voltage, where a ratio between the output voltage and the reference voltage is locked.

Career Highlights

Yiqun Cen is currently employed at Yangtze Memory Technologies, Ltd. His work at this company has positioned him as a key player in the development of advanced memory solutions. His expertise in voltage control has been instrumental in driving innovation within the organization.

Collaborations

Yiqun Cen collaborates with talented individuals such as Li Xiang and Ruxin Wei. These partnerships foster a creative environment that encourages the exchange of ideas and enhances the development of cutting-edge technologies.

Conclusion

Yiqun Cen's contributions to voltage control in memory devices exemplify his innovative spirit and dedication to advancing technology. His work continues to influence the field and pave the way for future developments in memory technology.

Profile summary based on public USPTO records.
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