The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Nov. 04, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Ke Ke, Wuhan, CN;

Li Xiang, Wuhan, CN;

Xufeng Zhou, Wuhan, CN;

Zhipeng Dong, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01);
Abstract

The present disclosure provides a programming method of a memory, a memory, and a memory system, and relates to the technical field of semiconductor chips. The method includes: applying a first program voltage to a first type of selected word lines and a reference voltage to unselected word lines adjacent to the first type of selected word lines during a first time period of a first program stage; and applying a second program voltage to the first type of selected word lines and a pass voltage to the unselected word lines adjacent to the first type of selected word lines during a second time period of the first program stage, wherein memory cells coupled to the unselected word lines adjacent to the first type of selected word lines are in an erased state, and the second program voltage is greater than the first program voltage.


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