The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2026

Filed:

Jan. 25, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Li Xiang, Wuhan, CN;

Wei Huang, Wuhan, CN;

Mehui Lai, Wuhan, CN;

Jianjie Li, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01);
Abstract

The present application provides an operation method of a memory, a memory, and a memory system, and relates to the technical field of semiconductor chips. The memory includes a memory block and a plurality of word lines coupled to the memory block. The operation method includes: applying a pass voltage to the plurality of word lines after a first read operation and before a second read operation; applying the pass voltage to the plurality of word lines in a pre-turn-on stage of the second read operation; and applying a first read voltage to a first word line of the plurality of word lines in a read stage of the second read operation, wherein the pass voltage is greater than the first read voltage. In the present application, the pass voltage is applied to the plurality of word lines after the first read operation and before the second read operation.


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