The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Apr. 02, 2024
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Li Xiang, Wuhan, CN;
Weihua Shi, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2005.12); G11C 16/08 (2005.12); G11C 16/24 (2005.12);
U.S. Cl.
CPC ...
G11C 16/08 (2012.12); G11C 16/0483 (2012.12); G11C 16/24 (2012.12);
Abstract
A method of operating a non-volatile memory including an unselected word line is provided. A first voltage rising at a first slope is applied by a voltage generator to the unselected word line. Outputting the first voltage is stopped by the voltage generator in response to that the first voltage rises to a predetermined voltage, wherein the predetermined voltage is higher than a pass voltage. The pass voltage is outputted by the voltage generator to the unselected word line.