The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Nov. 22, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Li Xiang, Wuhan, CN;

Zhuo Chen, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/32 (2013.01);
Abstract

The present disclosure relates to methods and devices for memory erase. In one example, a method for operating a memory device includes increasing a voltage of a source line (SL) coupled to a memory string from an initial voltage at a beginning of a time period, where the voltage of the SL is increased to an erase voltage at an end of the time period. The memory device can apply a first voltage to a first word line (WL) before the end of the time period. The memory device can apply a second voltage to a second WL adjacent to the first WL before the end of the time period. The memory device can further apply a third voltage to the second WL no later than the end of the time period, where the third voltage is higher than the second voltage.


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