Yamanashi, Japan

Koichiro Inazawa

This inventor holds 19 USPTO granted patents, primarily in Plasma Etching. Top assignees: Tokyo Electron Limited, Kabushiki Kaisha Toshiba, Fujitsu Corporation. Active years: 1997-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Koichiro Inazawa. Retrieved from https://idiyas.com/inventor/koichiro-inazawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 52.6

Average Co-Inventor Count = 3.6

ph-index = 7

Forward Citations = 233(Granted Patents)


Location History:

  • Tokyo, JP (1997 - 1998)
  • Beverly, MA (US) (2006)
  • Nirasaki, JP (2007)
  • Yamanashi, JP (2003 - 2009)
  • Peabody, MA (US) (2008 - 2011)
  • Yamanashi-Ken, JP (2009 - 2014)

Company Filing History:


Years Active: 1997-2014

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Areas of Expertise:
Plasma Etching
Photoresist Development
Semiconductor Fabrication
Dry Development
Etching Method
Multilayer Structures
Plasma Processing
Dual Damascene
Low-Pressure Removal
Etch Residue
Plasma Apparatus
Manufacturing Method
19 patents (USPTO):Explore Patents

Title: Innovations and Achievements of Koichiro Inazawa

Introduction

Koichiro Inazawa, an esteemed inventor from Yamanashi, Japan, has made significant contributions to the field of plasma etching technology. With a remarkable track record of 19 patents, Inazawa's inventions showcase his commitment to advancing industrial processes and materials science.

Latest Patents

Among his latest innovations, Inazawa has filed patents for groundbreaking techniques in plasma etching. One notable invention is a plasma etching method that includes arranging a pair of electrodes oppositely in a chamber, with one electrode supporting a substrate. The method cleverly employs a high-frequency electric field to selectively plasma-etch an organic-material film on the substrate while preserving an inorganic-material film. This process utilizes a frequency range of 50 to 150 MHz to optimize etching performance.

Another significant patent details a method and apparatus for multilayer photoresist dry development. This technique involves using a plasma processing system to etch an organic anti-reflective coating layer on a substrate. By introducing a process gas, including ammonia and hydrocarbon gases, the system effectively generates plasma to achieve precise etching results. The invention also includes a method for creating a bilayer mask for etching thin films, demonstrating Inazawa’s comprehensive approach to solving complex material challenges.

Career Highlights

Koichiro Inazawa has worked with renowned companies including Tokyo Electron Limited and Kabushiki Kaisha Toshiba. His experiences at these leading firms have undoubtedly shaped his innovative mindset and technical expertise, allowing him to pioneer advancements in plasma etching technology.

Collaborations

Throughout his career, Inazawa collaborated with notable professionals, including Shin Okamoto and Vaidyanathan Balasubramaniam. These partnerships have further enriched his work, fostering an environment of creativity and exchange of ideas that is vital for innovation in technology.

Conclusion

Koichiro Inazawa exemplifies the spirit of innovation in the field of plasma processing. With a substantial portfolio of patents and collaborations with industry leaders, his contributions continue to shape the future of materials science and processing technologies. His work not only enhances industrial applications but also paves the way for future inventions in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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