The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2006
Filed:
Aug. 13, 2002
Akinori Kitamura, Yamanashi, JP;
Vaidya Nathan Balasubramaniam, Beverly, MA (US);
Koichiro Inazawa, Yamanashi, JP;
Masaru Nishino, Yamanashi, JP;
Akinori Kitamura, Yamanashi, JP;
Vaidya Nathan Balasubramaniam, Beverly, MA (US);
Koichiro Inazawa, Yamanashi, JP;
Masaru Nishino, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A dry developing method for drawing a resist formed on a processed body by leading processing gas between parallel flat electrodes installed in a vacuum processing container and forming the plasma of the processing gas by applying a high frequency power to the electrodes, comprising the step of plasma-processing the resist on an etched layer having an already developed upper layer resist containing silicon and a lower layer resist installed in contact with the lower layer of the upper layer resist, wherein the lower layer resist is processed by a first process for plasma-processing by using the mixed gas of carbon monoxide gas and oxygen gas and a second step for plasma-processing by using the mixed gas of nitrogen gas and hydrogen gas, whereby an accurate drawing can be applied efficiently to the resist.