The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Oct. 26, 2000
Mitsuru Ishikawa, Yamanashi, JP;
Masaaki Hagihara, Beverly, MA (US);
Koichiro Inazawa, Yamanashi, JP;
Mitsuru Ishikawa, Yamanashi, JP;
Masaaki Hagihara, Beverly, MA (US);
Koichiro Inazawa, Yamanashi, JP;
Tokyo Electron Limited, , JP;
Abstract
In an etching method for etching an etching target film formed on a substrate placed inside an airtight processing chamberby inducing a processing gas into the processing chamber, the processing gas contains CF, Nand Ar and the etching target film is constituted of an upper organic polysiloxane film and a lower inorganic SiOfilm. The flow rate ratio of CFand Nin the processing gas is essentially set within a range of 1≦(Nflow rate/CFflow rate)≦4. If (Nflow rate/CFflow rate) is less than 1, an etching stop occurs and, as a result, deep etching is not achieved. If, on the other hand, (Nflow rate/CFflow rate) is larger than 4, bowing tends to occur and, thus, a good etching shape is not achieved. Accordingly, the flow rate ratio of CFand Nin the processing gas should be set essentially within a range of 1≦(Nflow rate/CFflow rate)≦4, to ensure that improvements in both the selection ratio and the etching shape are achieved.