This inventor holds 1 USPTO granted patent. Top assignee: Tokyo Electron Limited. Active years: 2009.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2009
Title: Mitsuru Ishikawa: Innovator in Etching Technology
Introduction
Mitsuru Ishikawa is a notable inventor based in Yamanashi, Japan. He has made significant contributions to the field of etching technology, particularly through his innovative methods that enhance the etching process.
Latest Patents
Ishikawa holds 1 patent for an etching method that involves etching a target film formed on a substrate within an airtight processing chamber. This method utilizes a processing gas that contains CF, N, and Ar. The etching target film consists of an upper organic polysiloxane film and a lower inorganic SiO film. The flow rate ratio of CF and N in the processing gas is crucial, as it must be maintained within the range of 1 ≤ (N flow rate/CF flow rate) ≤ 4. Deviating from this range can lead to undesirable outcomes, such as etching stops or poor etching shapes.
Career Highlights
Mitsuru Ishikawa is associated with Tokyo Electron Limited, a leading company in the semiconductor manufacturing equipment industry. His work has been instrumental in advancing etching technologies that are vital for the production of semiconductor devices.
Collaborations
Ishikawa has collaborated with notable colleagues, including Koichiro Inazawa and Masaaki Hagihara. Their combined expertise has contributed to the development of innovative solutions in the field of etching.
Conclusion
Mitsuru Ishikawa's contributions to etching technology exemplify the importance of innovation in the semiconductor industry. His patented methods continue to influence the efficiency and effectiveness of etching processes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile