The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2004
Filed:
Jan. 11, 2002
Applicant:
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A processing gas constituted of CH F , O and Ar is introduced into a processing chamber of a plasma processing apparatus . The flow rate ratio of the constituents of the processing gas is set at CH F /O /Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamber is set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 Mz is applied to a lower electrode on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiN layer formed on a Cu layer is etched. The exposed Cu layer is hardly oxidized and C and F are not injected into it.