The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Jun. 26, 2001
Takuya Mori, Yamanashi, JP;
Koichiro Inazawa, Yamanashi, JP;
Noriyuki Kobayashi, Yamanashi, JP;
Masahito Sugiura, Yamanashi, JP;
Yoshihiro Hayashi, Tokyo, JP;
Keizo Kinoshita, Tokyo, JP;
Takuya Mori, Yamanashi, JP;
Koichiro Inazawa, Yamanashi, JP;
Noriyuki Kobayashi, Yamanashi, JP;
Masahito Sugiura, Yamanashi, JP;
Yoshihiro Hayashi, Tokyo, JP;
Keizo Kinoshita, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A dual damascene structure with a lesser degree of shoulder loss is achieved. In a method for forming a dual damascene structure having a shoulder in an organic low k film layer by dry-etching the organic low k film layerand a mask layerformed over the organic low k filmusing at least two different mixed gases, a first step in which the mask layer is etched using a first process gas and then the organic low k film layer is etched into a predetermined depth by continuously using the first process gas and a second step following the first step, in which the organic low k film layer is etched using a second process gas are executed. Since a protective wall is formed at a side wall of a via during the first step, the extent of the shoulder loss occurring in the junction region where a trench and a via form a junction can be reduced.