Nirasaki, Japan

Masahito Sugiura

This inventor holds 20 USPTO granted patents and 1 published patent application, primarily in Film Formation Technology. Top assignees: Tokyo Electron Limited, International Business Machines Corporation, Nec Corporation. Active years: 2000-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahito Sugiura. Retrieved from https://idiyas.com/inventor/masahito-sugiura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 80.0

Average Co-Inventor Count = 3.6

ph-index = 10

Forward Citations = 457(Granted Patents)


Location History:

  • Minami-Alps, JP (2006)
  • Nirasaki, JP (2000 - 2024)
  • Yamanashi, JP (2002 - 2024)

Company Filing History:


Years Active: 2000-2026

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Areas of Expertise:
Film-Forming Method
Graphene Structure
Carbon Nanotubes
Semiconductor Device
Plasma Processing
Metal Layers
Low-Dielectric Films
CVD Method
Etching Process
Microwave Plasma
Tungsten Film
20 patents (USPTO):Explore Patents

Title: Masahito Sugiura: Innovator in Carbon-Containing Film and Graphene Structures

Introduction

Masahito Sugiura, hailing from Nirasaki, Japan, is a prominent inventor recognized for his significant contributions to the field of advanced materials through his innovative patents. With a total of 18 patents to his name, Sugiura has paved the way for advancements in carbon-containing films and graphene structures, influencing various industrial applications.

Latest Patents

Among his notable inventions are two remarkable patents. The first is a "Film forming method of carbon-containing film by microwave plasma." This method utilizes microwave plasma generated from a carbon-containing gas to create a film on a substrate. The process involves a dummy step for plasma generation, followed by placing the substrate and ultimately forming the film.

The second patent is a "Method and device for forming graphene structure," which outlines a groundbreaking approach to developing graphene. This method includes a preprocessing step that supplies a carbon-containing gas to a heated substrate, followed by a plasma-assisted chemical vapor deposition process to form the graphene structure on the substrate's surface.

Career Highlights

Masahito Sugiura has built an impressive career, having worked for esteemed companies such as Tokyo Electron Limited and International Business Machines Corporation (IBM). His expertise in materials science and engineering has allowed him to lead projects that push the boundaries of technology in the semiconductor and electronics industries.

Collaborations

Throughout his career, Sugiura has collaborated with notable professionals, including Hiroshi Shinriki and Takashi Matsumoto. These collaborations have been instrumental in driving forward innovative research and developments in the realm of carbon materials and processing technologies.

Conclusion

In summary, Masahito Sugiura's contributions to the field of innovation, particularly through his patents related to carbon-containing films and graphene structures, highlight his role as a pioneer in materials science. His work continues to inspire future advancements, as the technologies he has developed play a critical role in modern industries and research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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