The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Sep. 30, 2003
Hideaki Yamasaki, Kofu, JP;
Tsukasa Matsuda, Yamanashi, JP;
Atsushi Gomi, Yamanashi, JP;
Tatsuo Hatano, Ryuo, JP;
Masahito Sugiura, Minami-Alps, JP;
Yumiko Kawano, Kofu, JP;
Gert J Leusink, Saltpoint, NY (US);
Fenton R Mcfeely, Ossining, NY (US);
Sandra G. Malhotra, Beacon, NY (US);
Hideaki Yamasaki, Kofu, JP;
Tsukasa Matsuda, Yamanashi, JP;
Atsushi Gomi, Yamanashi, JP;
Tatsuo Hatano, Ryuo, JP;
Masahito Sugiura, Minami-Alps, JP;
Yumiko Kawano, Kofu, JP;
Gert J Leusink, Saltpoint, NY (US);
Fenton R McFeely, Ossining, NY (US);
Sandra G. Malhotra, Beacon, NY (US);
Tokyo Electron Limited, Tokyo, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO), Ni(CO), Mo(CO), Co(CO), Rh(CO), Re(CO), Cr(CO), and Ru(CO). In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.