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Fenton Read McFeely

This inventor holds 59 USPTO granted patents and 3 published patent applications, primarily in Copper Interconnects (CPC class H01L). Top assignees: International Business Machines Corporation, Tokyo Electron Limited, Globalfoundries Inc.. Active years: 1995-2016.

USPTO Granted Patents = 59 (Patent Applications = 3)

% Patents Active = 55.9

Average Co-Inventor Count = 4.0

ph-index = 14

Forward Citations = 647(Granted Patents)

Forward Citations (Not Self Cited) = 635(Dec 10, 2025)

Inventors with similar research interests:

Location History:

New York, NY (US) (2003)
Ossing, NY (US) (2004)
Ossinging, NY (US) (2006)
Yorktown Heights, NY (US) (2012)
Ossining, NY (US) (1995 - 2016)

Company Filing History:

56 out of 166,264

International Business Machines Corporation

patents

10 out of 10,862

Tokyo Electron Limited

where one patent can have more than one assignee

Years Active: 1995-2016

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Areas of Expertise:

Copper Vias

Metallization

Chemical Vapor Deposition

Noble Metal Cap

High Aspect Ratio

Interconnect Structures

Metal Layers

Passivation

Gate Stacks

Electroplating

Conductivity

Substrate Processing

59 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9392690 - Method and structure to improve the conductivity of narrow copper filled vias (2016-07-12),

2. 9343407 - Method to fabricate copper wiring structures and structures formed thereby (2016-05-17),

3. 9048296 - Method to fabricate copper wiring structures and structures formed thereby (2015-06-02),

4. 8785320 - Structure and process for metallization in high aspect ratio features (2014-07-22),

5. 8661664 - Techniques for forming narrow copper filled vias having improved conductivity (2014-03-04),

6. 8497580 - Noble metal cap for interconnect structures (2013-07-30),

7. 8450204 - Structure and process for metallization in high aspect ratio features (2013-05-28),

8. 8258495 - Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony (2012-09-04),

9. 8242030 - Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation (2012-08-14),

10. 8232647 - Structure and process for metallization in high aspect ratio features (2012-07-31),

11. 8153514 - Method of forming metal/high-κ gate stacks with high mobility (2012-04-10),

12. 7998864 - Noble metal cap for interconnect structures (2011-08-16),

13. 7964497 - Structure to facilitate plating into high aspect ratio vias (2011-06-21),

14. 7884018 - Method for improving the selectivity of a CVD process (2011-02-08),

15. 7863083 - High temperature processing compatible metal gate electrode for pFETS and methods for fabrication (2011-01-04),

Title: A Closer Look at Inventor Fenton Read McFeely

Introduction:

Fenton Read McFeely, a prolific inventor based in Ossining, NY, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 59 patents, his innovative spirit and expertise have shaped advancements in copper-filled vias and wiring structures.

Latest Patents:

McFeely's latest patents showcase his pioneering work in improving the conductivity of narrow copper-filled vias. By integrating techniques like diffusion barriers, ruthenium layers, and annealing processes, he has optimized the fabrication of high-quality copper wiring structures. These innovations pave the way for enhanced performance and reliability in semiconductor devices.

Career Highlights:

Throughout his career, McFeely has demonstrated a deep commitment to innovation and excellence. Having worked at renowned companies like IBM and Tokyo Electron Limited, he has gained invaluable experience in driving technological advancements in the semiconductor industry. His dedication to pushing the boundaries of what is possible has earned him a reputation as a visionary inventor.

Collaborations:

McFeely has collaborated with esteemed colleagues such as John Jacob Yurkas and Sandra Guy Malhotra. Together, they have leveraged their diverse expertise to tackle complex challenges and develop cutting-edge solutions. By fostering a collaborative environment, McFeely and his coworkers have successfully brought innovative ideas to life.

Conclusion:

Inventor Fenton Read McFeely's remarkable career journey is a testament to his passion for driving technological progress. His patented inventions in the realm of semiconductor technology have not only advanced the field but also inspired a new generation of innovators to push the boundaries of what is possible. Through his ongoing commitment to excellence, McFeely continues to shape the future of the industry with his groundbreaking discoveries.

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