The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Feb. 11, 2011
Applicants:
Fenton Read Mcfeely, Ossining, NY (US);
Chih-chao Yang, Glenmont, NY (US);
Inventors:
Fenton Read McFeely, Ossining, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76882 (2013.01); H01L 23/53238 (2013.01); H01L 21/76846 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Techniques formation of high purity copper (Cu)-filled lines and vias are provided. In one aspect, a method of fabricating lines and vias filled with high purity copper with is provided. The method includes the following steps. A via is etched in a dielectric. The via is lined with a diffusion barrier. A thin ruthenium (Ru) layer is conformally deposited onto the diffusion barrier. A Cu layer is deposited on the Ru layer by a sputtering process. A reflow anneal is performed to eliminate voids in the lines and vias.