The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2011

Filed:

Jan. 29, 2008
Applicants:

Chih-chao Yang, Glenmont, NY (US);

Daniel C. Edelstein, White Plains, NY (US);

Fenton R. Mcfeely, Ossining, NY (US);

Inventors:

Chih-Chao Yang, Glenmont, NY (US);

Daniel C. Edelstein, White Plains, NY (US);

Fenton R. McFeely, Ossining, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

An interconnect structure that includes a dielectric material having a dielectric constant of about 3.0 or less is provided. This low k dielectric material has at least one conductive material having an upper surface embedded therein. The dielectric material also has a surface layer that is made hydrophobic prior to the formation of the noble metal cap. The noble metal cap is located directly on the upper surface of the at least one conductive material. Because of the presence of the hydrophobic surface layer on the dielectric material, the noble metal cap does not substantially extend onto the hydrophobic surface layer of the dielectric material that is adjacent to the at least one conductive material and no metal residues from the noble metal cap deposition form on this hydrophobic dielectric surface.


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