The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

May. 29, 2015
Applicant:

Tokyo Electron Limited, Minato-ku, JP;

Inventors:

Takashi Matsumoto, Yamanashi, JP;

Masahito Sugiura, Yamanashi, JP;

Kenjiro Koizumi, Yamanashi, JP;

Yusaku Kashiwagi, Yamanashi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); C23C 16/503 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C01B 31/02 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); C23C 16/26 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/511 (2006.01);
U.S. Cl.
CPC ...
C23C 16/503 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 31/0226 (2013.01); C23C 16/26 (2013.01); C23C 16/4412 (2013.01); C23C 16/455 (2013.01); C23C 16/458 (2013.01); C23C 16/511 (2013.01); H01L 21/28556 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/53276 (2013.01); H01L 2221/1094 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.


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