The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2012
Filed:
Jun. 23, 2006
Masahito Sugiura, Yamanashi, JP;
Yasutaka Mizoguchi, Tokyo, JP;
Yasushi Aiba, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A tungsten film with a lower specific resistance and a lower fluorine concentration over its boundary with the base barrier layer, which adheres to the barrier layer with a high level of reliability, compared to tungsten films formed through methods in the related art, is formed. The tungsten film is formed through a process in which a silicon-containing gas is delivered to a wafer M placed within a processing containerand a process executed after the silicon-containing gas supply process, in which a first tungsten filmis formed by alternately executing multiple times, a tungsten-containing gas supply step for supplying a tungsten-containing gas and a hydrogen compound gas supply step for supplying a hydrogen compound gas with no silicon content with a purge step in which an inert gas is supplied into the processing container and/or an evacuation step for evacuating the processing container executed between the tungsten-containing gas supply step and the hydrogen compound gas supply step.