The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2022
Filed:
Mar. 18, 2020
Method of making a semiconductor device including a graphene barrier layer between conductive layers
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Makoto Wada, Nirasaki, JP;
Takashi Matsumoto, Nirasaki, JP;
Masahito Sugiura, Nirasaki, JP;
Ryota Ifuku, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76886 (2013.01); H01L 21/76849 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53233 (2013.01); H01L 23/53238 (2013.01); H01L 23/53247 (2013.01); H01L 23/53252 (2013.01); H01L 23/53276 (2013.01);
Abstract
There is provided a semiconductor device including a first conductive layer formed on a substrate; a second conductive layer serving as a wiring layer and a barrier layer provided between the first conductive layer and the second conductive layer, wherein the barrier layer is made of a graphene film, and the second conductive layer includes a metal silicide compound, the metal silicide compound being provided so as to be in contact with the graphene film constituting the barrier layer.