The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Jun. 28, 2001
Applicants:
Kaoru Maekawa, Nirasaki, JP;
Satohiko Hoshino, Nirasaki, JP;
Masahito Sugiura, Nirasaki, JP;
Federica Allegretti, Crawley, GB;
Inventors:
Kaoru Maekawa, Nirasaki, JP;
Satohiko Hoshino, Nirasaki, JP;
Masahito Sugiura, Nirasaki, JP;
Federica Allegretti, Crawley, GB;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract
A method of fabricating a semiconductor device includes the steps of forming a first insulation film on a substrate by a spin-on process, applying a curing process to the first insulation film at a temperature of 380-500° C. over a duration of 5-180 seconds, and forming a second insulation film on the first insulation film by a spin-on process.