The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2003
Filed:
Oct. 19, 2000
Tomoki Suemasa, Yamanashi, JP;
Vaidyanathan Balasubramaniam, Beverly, MA (US);
Koichiro Inazawa, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A wafer W is placed on a lower electrode provided inside a processing chamber of a plasma processing apparatus . A film constituted an organic polysiloxane, which is a Low-K material is formed at the wafer W. Plasma is generated inside the processing chamber to implement an etching process by using a photoresist film on the organic polysiloxane film as a mask and an opening pattern in which a portion of the organic polysiloxane film is exposed is formed. After the etching process, the wafer W is left inside the processing chamber . The pressure inside the processing chamber is set at a level within the range of 30 mTorr (4.00 Pa)˜150 mTorr (20.0 Pa) by inducing a processing gas into the processing chamber and evacuating the gas from the processing chamber . At the pressure level the set, the gas inside the processing chamber is raised to plasma and the photoresist film is ashed. Thus, a plasma processing method which makes it possible to remove the photoresist film on the organic polysiloxane film without compromising the low dielectric constant characteristics of the organic polysiloxane film is achieved.