The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Jun. 04, 2004
Masanobu Honda, Yamanashi-Ken, JP;
Kazuya Nagaseki, Yamanashi-Ken, JP;
Koichiro Inazawa, Yamanashi-Ken, JP;
Shoichiro Matsuyama, Yamanashi-Ken, JP;
Hisataka Hayashi, Kanagawa-Ken, JP;
Masanobu Honda, Yamanashi-Ken, JP;
Kazuya Nagaseki, Yamanashi-Ken, JP;
Koichiro Inazawa, Yamanashi-Ken, JP;
Shoichiro Matsuyama, Yamanashi-Ken, JP;
Hisataka Hayashi, Kanagawa-Ken, JP;
Tokyo Electron Limited, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.