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Hisataka Hayashi

This inventor holds 34 USPTO granted patents, primarily in Plasma Processing. Top assignees: Kabushiki Kaisha Toshiba, Tokyo Electron Limited, Kioxia Corporation. Active years: 1993-2024.

USPTO Granted Patents = 34

% Patents Active = 88.2

Average Co-Inventor Count = 3.6

ph-index = 14

Forward Citations = 616(Granted Patents)

Location History:

Chiba, JP (1994)
Urayasu, JP (1993 - 1995)
Kanagawa, JP (2013)
Mie-ken, JP (2015)
Yokohama, JP (1996 - 2017)
Kanagawa-ken, JP (2004 - 2019)
Yokkaichi Mie, JP (2019)
Yokkaichi, JP (2019 - 2023)
Mie, JP (2024)

Company Filing History:

30 out of 53,240

Kabushiki Kaisha Toshiba

patents

8 out of 10,862

Tokyo Electron Limited

Toshiba Memory Corporation

patents

where one patent can have more than one assignee

Years Active: 1993-2024

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Areas of Expertise:

Plasma Processing

Etching Method

Semiconductor Manufacturing

Substrate Processing

Pattern Formation

Dry Etching

Plasma Etching Unit

Organic Film Processing

Metal Wiring Fabrication

Device Manufacturing

Semiconductor Device

Surface Treatment

34 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12087556 - Plasma processing apparatus and plasma processing method (2024-09-10),

2. 11651969 - Etching method, semiconductor manufacturing apparatus, and method of manufacturing semiconductor device (2023-05-16),

3. 10388544 - Substrate processing apparatus and substrate processing method (2019-08-20),

4. 10381198 - Plasma processing apparatus and plasma processing method (2019-08-13),

5. 10332906 - Dry etching method and method for manufacturing semiconductor device (2019-06-25),

6. 9583360 - Substrate processing apparatus and substrate processing method (2017-02-28),

7. 9111875 - Pattern formation method (2015-08-18),

8. 8840753 - Plasma etching unit (2014-09-23),

9. 8821744 - Substrate processing method and substrate processing apparatus (2014-09-02),

10. 8821684 - Substrate plasma processing apparatus and plasma processing method (2014-09-02),

11. 8545670 - Plasma processing apparatus and plasma processing method (2013-10-01),

12. 8536061 - Semiconductor device manufacturing method (2013-09-17),

13. 8524609 - Method of fabricating semiconductor device (2013-09-03),

14. 8252193 - Plasma processing apparatus of substrate and plasma processing method thereof (2012-08-28),

15. 8084360 - Method of manufacturing semiconductor device (2011-12-27),

Title: The Innovative Journey of Hisataka Hayashi

Introduction: Hisataka Hayashi is a pioneering inventor hailing from Yokohama, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hisataka Hayashi holds several patents in the realm of robotics and artificial intelligence, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Hisataka Hayashi has worked tirelessly to develop cutting-edge solutions that have revolutionized the way we interact with technology. His work has been instrumental in shaping the future of robotics and automation.

Collaborations: Throughout his career, Hisataka Hayashi has collaborated with leading tech companies and research institutions to further his innovative projects. His ability to work in multidisciplinary teams has led to the creation of groundbreaking technologies.

Conclusion: Hisataka Hayashi's passion for innovation and his relentless drive to create have solidified his position as a trailblazer in the world of technology. His contributions continue to inspire future generations of inventors and innovators.

Profile summary based on public USPTO records.

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