The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2019

Filed:

Feb. 19, 2015
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Akio Ui, Tokyo, JP;

Hisataka Hayashi, Kanagawa-ken, JP;

Takeshi Kaminatsui, Kanagawa-ken, JP;

Shinji Himori, Yamanashi-ken, JP;

Norikazu Yamada, Yamanashi-ken, JP;

Takeshi Ohse, Yamanashi-ken, JP;

Jun Abe, Yamanashi-ken, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); H01J 37/321 (2013.01); H01J 37/32009 (2013.01); H01J 37/32027 (2013.01); H01J 37/32045 (2013.01); H01J 37/32091 (2013.01); H01J 37/32137 (2013.01); H01J 37/32532 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/32136 (2013.01); H01L 21/67253 (2013.01); H01L 22/14 (2013.01); H01L 22/26 (2013.01); H01J 2237/3341 (2013.01);
Abstract

There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.


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