Kanagawa, Japan

Takeshi Kaminatsui

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignees: Kabushiki Kaisha Toshiba, Tokyo Electron Limited. Active years: 2014-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takeshi Kaminatsui. Retrieved from https://idiyas.com/inventor/takeshi-kaminatsui

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 7.9

ph-index = 2

Forward Citations = 89(Granted Patents)


Location History:

  • Yokohama, JP (2014)
  • Kanagawa-ken, JP (2019)

Company Filing History:


Years Active: 2014-2019

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2 patents (USPTO):Explore Patents

Title: Inventor Takeshi Kaminatsui: Innovating Substrate Processing Technology

Introduction

Takeshi Kaminatsui is a notable inventor based in Kanagawa-ken, Japan. With a focus on advancements in substrate processing technology, he has successfully secured two patents that contribute significantly to the efficiency of this specialized field. His work exemplifies the fusion of innovative design and practical application, showcasing the potential for improvement in electronic manufacturing processes.

Latest Patents

Kaminatsui’s most recent patents include a "Substrate Processing Apparatus and Substrate Processing Method" and a "Substrate Plasma Processing Apparatus and Plasma Processing Method." The first patent addresses an effective reduction of voltage changes experienced by substrates on electrodes, thus minimizing the variation of incident energy of ions entering the substrate. This innovative apparatus includes a first electrode designed to hold the substrate, a second electrode positioned opposite the first, and a RF power source that applies a high-frequency RF voltage of 40 MHz or more to the first electrode. Additionally, the apparatus features a pulse voltage applying unit, which superimposes a pulse voltage that decreases over time onto the RF voltage.

The second patent focuses on a substrate plasma processing apparatus featuring a substrate holding electrode and a counter electrode within a dedicated chamber. This technology employs a high-frequency generating device to apply frequencies of 50 MHz or higher, and a DC negative pulse generating device that superimposes a DC negative pulse voltage onto the high frequency. A controller manages the intermittent application of both the high frequency and DC negative pulse voltage, enhancing control over the substrate processing.

Career Highlights

Throughout his career, Takeshi Kaminatsui has been associated with prominent companies in the technology sector, including Kabushiki Kaisha Toshiba and Tokyo Electron Limited. His contributions to these organizations underscore his commitment to advancing technology and innovation in substrate processing.

Collaborations

Kaminatsui has worked alongside esteemed colleagues such as Akio Ui and Hisataka Hayashi. These collaborations have fostered an environment of shared knowledge and expertise, leading to significant advancements in their respective fields.

Conclusion

Takeshi Kaminatsui stands out as a visionary inventor in the realm of substrate processing technology. His patents reflect a deep understanding of the complexities involved in enhancing substrate processing, positioning him as a key figure in the ongoing innovation landscape. As technology continues to evolve, Kaminatsui's contributions will undoubtedly inspire future developments in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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