The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jan. 30, 2009
Akio Ui, Tokyo, JP;
Naoki Tamaoki, Tokyo, JP;
Takashi Ichikawa, Saitama, JP;
Hisataka Hayashi, Yokohama, JP;
Takeshi Kaminatsui, Yokohama, JP;
Shinji Himori, Nirasaki, JP;
Norikazu Yamada, Nirasaki, JP;
Takeshi Ohse, Niarasaki, JP;
Jun Abe, Nirasaki, JP;
Akio Ui, Tokyo, JP;
Naoki Tamaoki, Tokyo, JP;
Takashi Ichikawa, Saitama, JP;
Hisataka Hayashi, Yokohama, JP;
Takeshi Kaminatsui, Yokohama, JP;
Shinji Himori, Nirasaki, JP;
Norikazu Yamada, Nirasaki, JP;
Takeshi Ohse, Niarasaki, JP;
Jun Abe, Nirasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.