The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Jun. 23, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yosuke Sato, Kanagawa, JP;

Akio Ui, Tokyo, JP;

Hisataka Hayashi, Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32577 (2013.01); C23C 16/50 (2013.01); H01J 37/32009 (2013.01); H01J 37/32091 (2013.01); H01J 37/32422 (2013.01); H01J 37/3244 (2013.01); H01J 37/32541 (2013.01); H01J 37/32568 (2013.01); H01J 37/32706 (2013.01); H01J 37/32715 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.


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