The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Mar. 16, 2020
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventors:

Chihiro Abe, Yokkaichi, JP;

Toshiyuki Sasaki, Yokkaichi, JP;

Hisataka Hayashi, Yokkaichi, JP;

Mitsuhiro Omura, Nagoya, JP;

Tsubasa Imamura, Kuwana, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32449 (2013.01); H01J 37/32724 (2013.01); H01L 21/0206 (2013.01); H01L 21/67069 (2013.01); H01J 2237/002 (2013.01); H01J 2237/3341 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.


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