The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Jan. 07, 2008
Vaidyanathan Balasubramaniam, Woburn, MA (US);
Koichiro Inazawa, Peabody, MA (US);
Rie Inazawa, Hokuto, JP;
Rich Wise, Newburgh, NY (US);
Arpan Mahorawala, Bronxville, NY (US);
Siddhartha Panda, I.I.T. Kanpur, IN;
Vaidyanathan Balasubramaniam, Woburn, MA (US);
Koichiro Inazawa, Peabody, MA (US);
Rie Inazawa, Hokuto, JP;
Rich Wise, Newburgh, NY (US);
Arpan Mahorawala, Bronxville, NY (US);
Siddhartha Panda, I.I.T. Kanpur, IN;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NHand a hydrocarbon gas such as at least one of CH, CH, CH, CH, CH, CH, CH, CH, CH, CH, CH, CH, CH, CH, and CH. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH), and a passivation gas.