The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2007
Filed:
Aug. 02, 2004
Applicants:
Masaaki Hagihara, Beverly, MA (US);
Koichiro Inazawa, Yamanashi, JP;
Wakako Naito, Yamanashi, JP;
Inventors:
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
A processing gas constituted of CHF, Oand Ar is introduced into a processing chamberof a plasma processing apparatus. The flow rate ratio of the constituents of the processing gas is set at CHF/O/Ar=20 sccm/10 sccm/100 sccm. The pressure inside the processing chamberis set at 50 mTorr. 500 W high frequency power with its frequency set at 13.56 MHz is applied to a lower electrode.on which a wafer W is placed. The processing gas is raised to plasma and thus, an SiNlayerformed on a Cu layeris etched. The exposed Cu layeris hardly oxidized and C and F are not injected into it.