The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Sep. 06, 2002
Applicants:
Akitoshi Harada, Yamanashi, JP;
Koichiro Inazawa, Yamanashi, JP;
Inventors:
Akitoshi Harada, Yamanashi, JP;
Koichiro Inazawa, Yamanashi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
An etching method comprises a step of forming a via hole structure based on a photoresist film layer () for forming a wiring pattern, a silicon oxide film layer () which is a hard mask layer formed under the photoresist film, and an organic Low-k film layer () formed under the hard mask layer, wherein in the step, the organic film layer and the organic Low-k film layer are etched by using a mixture gas of Ngas, Hgas, and a CF gas.