The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2006

Filed:

May. 14, 2004
Applicants:

Akitoshi Harada, Nirasaki, JP;

Shin Okamoto, Nirasaki, JP;

Koichiro Inazawa, Beverly, MA (US);

Inventors:

Akitoshi Harada, Nirasaki, JP;

Shin Okamoto, Nirasaki, JP;

Koichiro Inazawa, Beverly, MA (US);

Assignee:

Tokyo Electron Limited, Tokyo-To, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

This semiconductor device includes a substrateto be processed, a first insulation filmarranged at a designated position on the substrateto have a via-hole, an organic filmformed on the first insulation filmand a second insulation filmformed on the organic film. Both of the organic filmand the second insulation filmhave a trenchin communication with the via-hole, in common. Additionally, a manufacturing method of this semiconductor device includes the processes of forming the organic filmon the substrateto be processed, forming a film having a designated pattern on the organic filmwhile exposing a part of the organic film, and removing the exposed part of the organic filmfrom the substrateto expose a foundation layer of the organic film


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