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Hwaseong-si, South Korea

Jun-youn Kim

USPTO Granted Patents = 45 (Patent Applications = 9)

Average Co-Inventor Count = 3.4

ph-index = 6

Forward Citations = 122(Granted Patents)

Location History:

Suwon-si, KR (2006 - 2016)
Hwaseong-si, KR (2011 - 2021)

Company Filing History:

45 out of 131,611

Samsung Electronics Co., Ltd.

Years Active: 2006-2021

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Areas of Expertise:

Gallium Nitride

Semiconductor Devices

Light Emitting Devices

High Electron Mobility Transistor

Vertical Light Emitting Devices

Epitaxial Structures

Nanowire Fabrication

Semiconductor Buffer Structures

Dispersion Bragg Reflection

Low-Defect Semiconductor

Surgical Robotics

Optical Devices

45 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10900142 - Apparatus for manufacturing a second substrate on a first substrate including removal of the first substrate (2021-01-26),

2. 10094045 - Method of manufacturing a gallium nitride substrate (2018-10-09),

3. 9793432 - Light emitting devices and methods of manufacturing the same (2017-10-17),

4. 9583340 - Semipolar nitride semiconductor structure and method of manufacturing the same (2017-02-28),

5. 9472624 - Semiconductor buffer structure, semiconductor device including the same, and manufacturing method thereof (2016-10-18),

6. 9449817 - Semiconductor devices and methods of manufacturing the same (2016-09-20),

7. 9422638 - Silicon substrate including an edge portion, epitaxial structure including the same, and method of manufacturing the silicon substrate (2016-08-23),

8. 9337381 - Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure (2016-05-10),

9. 9257599 - Semiconductor light emitting device including hole injection layer (2016-02-09),

10. 9246048 - Semiconductor light emitting devices having an uneven emission pattern layer and methods of manufacturing the same (2016-01-26),

11. 9224909 - GaN based light emitting devices utilizing dispersion bragg reflection layer (2015-12-29),

12. 9202878 - Gallium nitride based semiconductor device and method of manufacturing the same (2015-12-01),

13. 9190270 - Low-defect semiconductor device and method of manufacturing the same (2015-11-17),

14. 9136430 - Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure (2015-09-15),

15. 8957432 - Semiconductor device (2015-02-17),

Title: Jun-youn Kim: Innovator from Hwaseong-si, KR

Introduction: Jun-youn Kim is a renowned inventor hailing from Hwaseong-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jun-youn Kim holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Jun-youn Kim has worked with leading tech companies, research institutions, and universities, playing a pivotal role in developing cutting-edge solutions that have revolutionized the industry.

Collaborations: Throughout his career, Jun-youn Kim has collaborated with top inventors, patent attorneys, and companies worldwide, fostering a culture of innovation and knowledge sharing that has led to numerous successful projects and inventions.

Conclusion: Jun-youn Kim's passion for innovation, coupled with his relentless drive to push the boundaries of technology, has solidified his position as a visionary inventor in the global landscape of inventions and patents.

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