The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Dec. 13, 2012
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Young-jo Tak, Hwaseong-si, KR;
Jae-kyun Kim, Hwaseong-si, KR;
Jun-youn Kim, Hwaseong-si, KR;
Jae-won Lee, Seoul, KR;
Hyo-ji Choi, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 29/267 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02447 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 29/16 (2013.01); H01L 29/2003 (2013.01); H01L 33/12 (2013.01); H01L 33/007 (2013.01);
Abstract
A gallium nitride based semiconductor device includes a silicon-based layer doped simultaneously with boron (B) and germanium (Ge) at a relatively high concentration, a buffer layer on the silicon-based layer, and a nitride stack on the buffer layer. A doping concentration of boron (B) and germanium (Ge) may be higher than 1×10/cm.