The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
May. 28, 2014
Jae-kyun Kim, Hwaseong-si, KR;
Joo-sung Kim, Seongnam-si, KR;
Jun-youn Kim, Hwaseong-si, KR;
Young-soo Park, Yongin-si, KR;
Young-jo Tak, Hwaseong-si, KR;
Jae-kyun Kim, Hwaseong-si, KR;
Joo-sung Kim, Seongnam-si, KR;
Jun-youn Kim, Hwaseong-si, KR;
Young-soo Park, Yongin-si, KR;
Young-jo Tak, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type.