The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Apr. 25, 2011
Applicants:
Jun-youn Kim, Hwaseong-si, KR;
Young-jo Tak, Hwaseong-si, KR;
Jae-won Lee, Yongin-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/26 (2010.01); H01L 29/267 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01);
Abstract
A semiconductor device may reduce a dislocation density and tensile stress by forming a plurality of interlayers between neighboring clad layers. The semiconductor device may include a plurality of clad layers on a substrate and a plurality of interlayers between neighboring clad layers.