Samsung Electronics Co., Ltd.

Jun-youn Kim

Young-jo Tak

Young-soo Park

Su-hee Chae

Hyun-gi Hong

Jae-Won Lee

Bok-ki Min

Hyung-su Jeong

Jae-Kyun Kim

Joo-sung Kim

Jae-won Lee

Hyo-ji Choi

Taek Woon Kim

Kyoung-kook Kim

Moon-seung Yang

Jae-Chul Park

Mi-hyun Kim

Sam-mook Kang

Ki-sung Kim

Kyoung-ho Ha

Jun-sik Hwang

Jung-Kee Lee

Eun-ha Lee

Eun-Hwa Lee

Eun-ju Bae

Joong S Jeon

Soo-Haeng Cho

Hyeon-Soo Kim

Young-Churl Bang

Joong S Jeong

An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.

Apparatus for manufacturing a second substrate on a first substrate including removal of the first substrate

In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process. The capping layer and the silicon substrate may be removed.

Method of manufacturing a gallium nitride substrate

Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned distributed Bragg reflector (DBR) on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR and regions between patterns of the DBR.

Light emitting devices and methods of manufacturing the same

Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7&#x2266;k&#x2266;13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.

Semipolar nitride semiconductor structure and method of manufacturing the same

A semiconductor structure including a first nitride semiconductor layer, a second nitride semiconductor layer, and a third layer between the first nitride semiconductor layer and the second nitride semiconductor layer. The first nitride semiconductor layer has a first gallium composition ratio, the second nitride semiconductor layer has a second gallium composition ratio different from the first metal composition ratio, and the third layer has a third gallium composition ratio greater than at least one of the first gallium composition ratio or the second gallium composition ratio. The structure may also include a fourth layer for reducing tensile stress or increasing compression stress experienced by at least the second nitride semiconductor layer.

Semiconductor buffer structure, semiconductor device including the same, and manufacturing method thereof

A semiconductor device includes a substrate, a buffer layer on the substrate, and a plurality of nitride semiconductor layers on the buffer layer. The semiconductor device further includes at least one masking layer and at least one inter layer between the plurality of nitride semiconductor layers. The at least one inter layer is on the at least one masking layer.

Semiconductor devices and methods of manufacturing the same

Crack formation and propagation in a silicon substrate may be reduced by forming a crack reducing portion. The silicon substrate includes a silicon main portion and a silicon edge portion formed around the silicon main portion. The crack reducing portion is formed on the silicon edge portion of the silicon substrate such that the directions of crystal faces in the crack reducing portion are randomly oriented.

Silicon substrate including an edge portion, epitaxial structure including the same, and method of manufacturing the silicon substrate

A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer.

Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure

According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type.

Semiconductor light emitting device including hole injection layer

Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.

Semiconductor light emitting devices having an uneven emission pattern layer and methods of manufacturing the same

Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer.

GaN based light emitting devices utilizing dispersion bragg reflection layer

A gallium nitride based semiconductor device includes a silicon-based layer doped simultaneously with boron (B) and germanium (Ge) at a relatively high concentration, a buffer layer on the silicon-based layer, and a nitride stack on the buffer layer. A doping concentration of boron (B) and germanium (Ge) may be higher than 1&#xd7;10/cm.

Gallium nitride based semiconductor device and method of manufacturing the same

Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition.

Low-defect semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device includes forming a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer. The first layer includes AlInGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;x+y&#x2266;1) and has a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer is formed on the first layer, includes AlInGaN (0&#x2266;x&#x3c;1, 0&#x2266;y&#x3c;1, 0&#x2266;x+y&#x3c;1), and has a lattice constant LP2 that is greater than LP1 and smaller than LP0. The third layer is formed on the second layer, includes AlInGaN (0&#x2266;x&#x3c;1, 0&#x2266;y&#x3c;1, 0&#x2266;x+y&#x3c;1), and has a lattice constant LP3 that is smaller than LP2.

Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure

A semiconductor device may reduce a dislocation density and tensile stress by forming a plurality of interlayers between neighboring clad layers. The semiconductor device may include a plurality of clad layers on a substrate and a plurality of interlayers between neighboring clad layers.

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Hwaseong-si, South Korea

Jun-youn Kim