The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Sep. 12, 2014
Jun-youn Kim, Hwaseong-si, KR;
Young-jo Tak, Hwaseong-si, KR;
Jae-kyun Kim, Hwaseong-si, KR;
Joo-sung Kim, Seongnam-si, KR;
Young-soo Park, Yongin-si, KR;
Su-hee Chae, Suwon-si, KR;
Jun-youn Kim, Hwaseong-si, KR;
Young-jo Tak, Hwaseong-si, KR;
Jae-kyun Kim, Hwaseong-si, KR;
Joo-sung Kim, Seongnam-si, KR;
Young-soo Park, Yongin-si, KR;
Su-hee Chae, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer.