The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Jul. 05, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sam-mook Kang, Hwaseong-si, KR;

Jun-youn Kim, Hwaseong-si, KR;

Young-jo Tak, Hwaseong-si, KR;

Mi-hyun Kim, Seoul, KR;

Young-soo Park, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); H01L 21/687 (2006.01); H01J 37/32 (2006.01); C23C 16/52 (2006.01); C30B 25/14 (2006.01); C30B 25/12 (2006.01); C23C 16/455 (2006.01); C23C 16/02 (2006.01); C23C 16/458 (2006.01); C23C 16/01 (2006.01); C23C 16/30 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
C30B 25/165 (2013.01); C23C 16/01 (2013.01); C23C 16/0272 (2013.01); C23C 16/303 (2013.01); C23C 16/455 (2013.01); C23C 16/4585 (2013.01); C23C 16/52 (2013.01); C30B 25/12 (2013.01); C30B 25/14 (2013.01); C30B 25/183 (2013.01); C30B 29/406 (2013.01); H01J 37/3244 (2013.01); H01J 37/32403 (2013.01); H01J 37/32449 (2013.01); H01J 37/32513 (2013.01); H01J 37/32715 (2013.01); H01L 21/68721 (2013.01); H01L 21/68735 (2013.01); H01L 21/0254 (2013.01); H01L 21/7806 (2013.01);
Abstract

An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.


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